- Common P Channel Mosfet Numbers
- Common P Channel Mosfet Code
- Most Common P Channel Mosfet
- Common P Channel Mosfet
- P Channel Mosfet Basics
- P Channel Mosfet Driver Circuit
- P Channel Mosfet Symbol
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2N6845, datasheet for 2N6845 - POWER MOSFET P-CHANNEL (BVdss=-100V, Rds (on)=0.60ohm, Id=-4.0A) provided by International Rectifier. 2N6845 pdf documentation and 2N6845 application notes, selection. If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that.
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FETs have a few disadvantages like high drain resistance, moderate input impedance and slower operation. To overcome these disadvantages, the MOSFET which is an advanced FET is invented.
MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. This is also called as IGFET meaning Insulated Gate Field Effect Transistor. The FET is operated in both depletion and enhancement modes of operation. The following figure shows how a practical MOSFET looks like.
Construction of a MOSFET
The construction of a MOSFET is a bit similar to the FET. An oxide layer is deposited on the substrate to which the gate terminal is connected. This oxide layer acts as an insulator (sio2 insulates from the substrate), and hence the MOSFET has another name as IGFET. In the construction of MOSFET, a lightly doped substrate, is diffused with a heavily doped region. Depending upon the substrate used, they are called as P-type and N-type MOSFETs.
The following figure shows the construction of a MOSFET.
The voltage at gate controls the operation of the MOSFET. In this case, both positive and negative voltages can be applied on the gate as it is insulated from the channel. With negative gate bias voltage, it acts as depletion MOSFET while with positive gate bias voltage it acts as an Enhancement MOSFET.
Classification of MOSFETs
Depending upon the type of materials used in the construction, and the type of operation, the MOSFETs are classified as in the following figure.
Common P Channel Mosfet Numbers
After the classification, let us go through the symbols of MOSFET.
The N-channel MOSFETs are simply called as NMOS. The symbols for N-channel MOSFET are as given below.
The P-channel MOSFETs are simply called as PMOS. The symbols for P-channel MOSFET are as given below.
Now, let us go through the constructional details of an N-channel MOSFET. Usually an NChannel MOSFET is considered for explanation as this one is mostly used. Also, there is no need to mention that the study of one type explains the other too.
Construction of N- Channel MOSFET
Let us consider an N-channel MOSFET to understand its working. A lightly doped P-type substrate is taken into which two heavily doped N-type regions are diffused, which act as source and drain. Between these two N+ regions, there occurs diffusion to form an Nchannel, connecting drain and source.
A thin layer of Silicon dioxide (SiO2) is grown over the entire surface and holes are made to draw ohmic contacts for drain and source terminals. A conducting layer of aluminum is laid over the entire channel, upon this SiO2 layer from source to drain which constitutes the gate. The SiO2 substrate is connected to the common or ground terminals.
Because of its construction, the MOSFET has a very less chip area than BJT, which is 5% of the occupancy when compared to bipolar junction transistor. This device can be operated in modes. They are depletion and enhancement modes. Let us try to get into the details.
Working of N - Channel (depletion mode) MOSFET
For now, we have an idea that there is no PN junction present between gate and channel in this, unlike a FET. We can also observe that, the diffused channel N (between two N+ regions), the insulating dielectric SiO2 and the aluminum metal layer of the gate together form a parallel plate capacitor.
If the NMOS has to be worked in depletion mode, the gate terminal should be at negative potential while drain is at positive potential, as shown in the following figure.
When no voltage is applied between gate and source, some current flows due to the voltage between drain and source. Let some negative voltage is applied at VGG. Then the minority carriers i.e. holes, get attracted and settle near SiO2 layer. But the majority carriers, i.e., electrons get repelled.
With some amount of negative potential at VGG a certain amount of drain current ID flows through source to drain. When this negative potential is further increased, the electrons get depleted and the current ID decreases. Hence the more negative the applied VGG, the lesser the value of drain current ID will be.
The channel nearer to drain gets more depleted than at source (like in FET) and the current flow decreases due to this effect. Hence it is called as depletion mode MOSFET.
Working of N-Channel MOSFET (Enhancement Mode)
The same MOSFET can be worked in enhancement mode, if we can change the polarities of the voltage VGG. So, let us consider the MOSFET with gate source voltage VGG being positive as shown in the following figure.
When no voltage is applied between gate and source, some current flows due to the voltage between drain and source. Let some positive voltage is applied at VGG. Then the minority carriers i.e. holes, get repelled and the majority carriers i.e. electrons gets attracted towards the SiO2 layer.
With some amount of positive potential at VGG a certain amount of drain current ID flows through source to drain. When this positive potential is further increased, the current ID increases due to the flow of electrons from source and these are pushed further due to the voltage applied at VGG. Hence the more positive the applied VGG, the more the value of drain current ID will be. The current flow gets enhanced due to the increase in electron flow better than in depletion mode. Hence this mode is termed as Enhanced Mode MOSFET.
P - Channel MOSFET
The construction and working of a PMOS is same as NMOS. A lightly doped n-substrate is taken into which two heavily doped P+ regions are diffused. These two P+ regions act as source and drain. A thin layer of SiO2 is grown over the surface. Holes are cut through this layer to make contacts with P+ regions, as shown in the following figure.
Working of PMOS
When the gate terminal is given a negative potential at VGG than the drain source voltage VDD, then due to the P+ regions present, the hole current is increased through the diffused P channel and the PMOS works in Enhancement Mode.
When the gate terminal is given a positive potential at VGG than the drain source voltage VDD, then due to the repulsion, the depletion occurs due to which the flow of current reduces. Thus PMOS works in Depletion Mode. Though the construction differs, the working is similar in both the type of MOSFETs. Hence with the change in voltage polarity both of the types can be used in both the modes.
This can be better understood by having an idea on the drain characteristics curve.
Drain Characteristics
The drain characteristics of a MOSFET are drawn between the drain current ID and the drain source voltage VDS. The characteristic curve is as shown below for different values of inputs.
Actually when VDS is increased, the drain current ID should increase, but due to the applied VGS, the drain current is controlled at certain level. Hence the gate current controls the output drain current.
Transfer Characteristics
Transfer characteristics define the change in the value of VDS with the change in ID and VGS in both depletion and enhancement modes. The below transfer characteristic curve is drawn for drain current versus gate to source voltage.
Comparison between BJT, FET and MOSFET
Now that we have discussed all the above three, let us try to compare some of their properties.
| TERMS | BJT | FET | MOSFET |
|---|---|---|---|
| Device type | Current controlled | Voltage controlled | Voltage Controlled |
| Current flow | Bipolar | Unipolar | Unipolar |
| Terminals | Not interchangeable | Interchangeable | Interchangeable |
| Operational modes | No modes | Depletion mode only | Both Enhancement and Depletion modes |
| Input impedance | Low | High | Very high |
| Output resistance | Moderate | Moderate | Low |
| Operational speed | Low | Moderate | High |
| Noise | High | Low | Low |
| Thermal stability | Low | Better | High |
So far, we have discussed various electronic components and their types along with their construction and working. All of these components have various uses in the electronics field. To have a practical knowledge on how these components are used in practical circuits, please refer to the ELECTRONIC CIRCUITS tutorial.
Biasing of MOSFET
*N-channel enhancement mode MOSFET circuit shows the source terminal at ground potential and is common to both the input and output sides of the circuit. *The coupling capacitor acts as an open circuit to d.c. but it allows the signal voltage to be coupled to the gate of the MOSFET
Assume VG > VT , MOSFET is biased in the saturation region, the drain current is,
Biased in the nonsaturation region, and the drain current is given by, ID
Example problem-1
Here, the source is tied to +VDD, Which become signal ground in the a.c. equivalent circuit. Thus it is also a common-source circuit.
The d.c. analysis for this circuit is essentially the same as for the n-channel MOSFET circuit. The gate voltage is given by,
Common P Channel Mosfet Code
Load Line and Modes of Operation
The load line gives a graphical picture showing the region in whichthe MOSFET is biased. Consider the common-source circuit shown in Fig. (a).
Writing Kirchhoff's voltage law around the drain-source loop results VDs = VDD -IDRD, which is the load line equation. It shows a linear relationship between the drain current and drain-to-source voltage. Fig. (b) shows the VDS(sat) characteristic for the MOSFET
Most Common P Channel Mosfet
The two end points of the load line are determine in the usual manner. If the drain current = 0, then VDS= 10 v; if VDS = 0, then drain current = 10/40 = 0.25 mA. The Q-point of the MOSFET is given by the d.c. drain current (ID) and drain-to-source voltage (VDS) and it is always on the load line, as shown in the Fig. b).
If the gate-to-source voltage is less than V1, the drain current is zero and the MOSFET is in cut-off. As the gate-to- source voltage becomes just greater than the threshold voltage, the MOSFET turns ON and is biased in the saturation region. As V GS increases, the Q-point moves up the load line. The transition point is the boundary between the saturation and non-saturation regions. It is the point where,
Common Source circuit for EMOSFET with source resistor
Voltage Divider Bias
Biasing Circuit for D MOSFET
Biasing circuits for depletion type MOSFET are quite similar to the circuits used for JFET biasing. The primary difference between the two is the fact that depletion type MOSFETs also permit operating points with positive value of V6s for n-channel and negative values of V6s for p-channel MOSFET. To have positive value of V GS for n-channel and negative value of V6s for p-channel self bias circuit is unsuitable.
Example problem-1
Common P Channel Mosfet
P Channel Mosfet Basics
P Channel Mosfet Driver Circuit
P Channel Mosfet Symbol